涓冩倕绉戞妧锛屽皥娉ㄩ湇鐖�锛屾偍韬倞鐨勯湇鐖鹃枊(k膩i)闂�(gu膩n)灏堝锛�
娣卞湷甯備竷鎮呯鎶€鏈夐檺鍏徃锛屽皥妤�(y猫)寰炰簨纾佹帶闇嶇埦闁�(k膩i)闂�(gu膩n)鐨勭爺鐧�(f膩)鍜岄姺鍞�銆�
娣卞湷涓冩倕绉戞妧鐐轰綘鍎�(y艒u)閬告捣閲忓畬鏁寸殑瀹剁敤澹撹挏鍣ㄩ湇鐖鹃枊(k膩i)闂�(gu膩n)锛岄浕鍕�(d貌ng)鎵撹挏鍣ㄩ湇鐖惧厓浠禜S516锛屾敮鎸佺寤虹渷婕冲窞甯傚湪绶氬(sh铆)鏅�(sh铆)瑭㈠児(ji脿)銆�
General Debion
The HS516R Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits.This serves to place the high current-cons uming portions of the circuit into a 鈥淪leep鈥� mode. Periodically the device is 鈥淎wakened鈥� by this internal logic and the magnetic flux from the Hall element is buated against the predefined thresholds. If the flux density is above or below the B OP/BRP thresholds then the output transistor is driven to change states accordingly. While in the 鈥淪leep鈥� cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems.
The output transistor of the HS516R will be latched on (BOP) in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence of amagnetic field.It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
娣卞湷甯備竷鎮呯鎶€鏈夐檺鍏徃锛岄暦(zh菐ng)鏈熸彁渚涘叏妤甸湇鐖鹃枊(k膩i)闂�(gu膩n)锛屽柈妤甸湇鐖鹃枊(k膩i)闂�(gu膩n)锛岄洐妤甸湇鐖鹃枊(k膩i)闂�(gu膩n)锛岄帠瀛橀湇鐖鹃枊(k膩i)闂�(gu膩n)锛屽井鍔熻€楅湇鐖鹃枊(k膩i)闂�(gu膩n)锛岀鎬у偝鎰熷櫒锛�闇嶇埦鍏冧欢(4姊濊吙)锛岄娀鍖栭姦Insb锛岄湇鐖惧偝鎰熷櫒锛岀窔鎬ч湇鐖撅紝闆绘(j墨)闇嶇埦锛屾脯(c猫)閫熼湇鐖�锛岄湇鐖�IC锛岀鎺ч枊(k膩i)闂�(gu膩n)銆�
姝¤繋渚�(l谩i)闆诲挩瑭�?c猫)鏁�?x矛)鍔熻兘銆佸弮鏁�(sh霉)鍙婁唬鏇垮瀷铏�(h脿o)閬稿瀷锛岄毃鏅�(sh铆)鎻愪緵鎶€琛�(sh霉)鏀寔锛�