涓冩倕绉戞妧锛屽皥娉ㄩ湇鐖撅紝鎮ㄨ韩閭婄殑闇嶇埦闁嬮棞(gu膩n)灏堝锛�
娣卞湷甯備竷鎮呯鎶€鏈夐檺鍏徃锛屽皥妤�(y猫)寰炰簨纾佹帶闇嶇埦闁嬮棞(gu膩n)鐨勭爺鐧�(f膩)鍜岄姺鍞�銆�
娣卞湷涓冩倕绉戞妧鐐轰綘鍎�(y艒u)閬告捣閲忓畬鏁寸殑缈昏鍣ㄩ湇鐖惧偝鎰熷櫒锛岀炕璀€虫(j墨)闇嶇埦HS517锛屾敮鎸佹繜(j矛)鍗楀湪绶氬(sh铆)鏅�(sh铆)瑭㈠児(ji脿)銆�
General Debion
The HS517R Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits.This serves to place the high current-cons uming portions of the circuit into a 鈥淪leep鈥� mode. Periodically the device is 鈥淎wakened鈥� by this internal logic and the magnetic flux from the Hall element is buated against the predefined thresholds. If the flux density is above or below the B OP/BRP thresholds then the output transistor is driven to change states accordingly. While in the 鈥淪leep鈥� cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems.
The output transistor of the HS517R will be latched on (BOP) in the presence of a sufficiently
strong South or North magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence of amagnetic field.It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
Featrues
v CMOS output
v Micropower consumption for battery powered
applications
v Output switches with absolute value of North
or South pole from magnet
v High sensitivity for direct reed switch
replacement applications
v
娣卞湷甯備竷鎮呯鎶€鏈夐檺鍏徃锛岄暦鏈熸彁渚涘叏妤甸湇鐖鹃枊闂�(gu膩n)锛屽柈妤甸湇鐖鹃枊闂�(gu膩n)锛岄洐妤�闇嶇埦闁嬮棞(gu膩n)锛�閹栧瓨闇嶇埦闁嬮棞(gu膩n)锛�寰姛鑰楅湇鐖鹃枊闂�(gu膩n)锛岀鎬у偝鎰熷櫒锛�闇嶇埦鍏冧欢(4姊濊吙)锛岄娀鍖栭姦Insb锛岄湇鐖惧偝鎰熷櫒锛岀窔鎬ч湇鐖撅紝闆绘(j墨)闇嶇埦锛屾脯閫熼湇鐖�锛岄湇鐖�IC锛岀鎺ч枊闂�(gu膩n)銆�
姝¤繋渚嗛浕鍜ㄨ瑭崇窗(x矛)鍔熻兘銆佸弮鏁�(sh霉)鍙婁唬鏇垮瀷铏熼伕鍨�锛岄毃鏅�(sh铆)鎻愪緵鎶€琛�(sh霉)鏀寔锛�