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General Debion
The HS516R Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits.This serves to place the high current-cons uming portions of the circuit into a 鈥淪leep鈥� mode. Periodically the device is 鈥淎wakened鈥� by this internal logic and the magnetic flux from the Hall element is buated against the predefined thresholds. If the flux density is above or below the B OP/BRP thresholds then the output transistor is driven to change states accordingly. While in the 鈥淪leep鈥� cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems.
The output transistor of the HS516R will be latched on (BOP) in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence of amagnetic field.It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
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