| 產(chǎn)品屬性 | 屬性值 |
|---|---|
| 制造商: | Microchip |
| 產(chǎn)品種類: | 分立半導(dǎo)體模塊 |
| RoHS: | 詳細(xì)信息 |
| 產(chǎn)品: | Power MOSFET Modules |
| 類型: | Phase Leg |
| 技術(shù): | SiC |
| Vf - 正向電壓: | 1.5 V at 30 A |
| Vr - 反向電壓 : | 1.2 kV |
| Vgs - 柵極-源極電壓: | - 10 V, + 25 V |
| 安裝風(fēng)格: | Screw Mount |
| 封裝 / 箱體: | SP1F |
| 最小工作溫度: | - 40 C |
| 最大工作溫度: | + 125 C |
| 封裝: | Bulk |
| 商標(biāo): | Microchip Technology |
| 下降時(shí)間: | 25 ns |
| Id-連續(xù)漏極電流: | 89 A |
| Pd-功率耗散: | 395 W |
| 產(chǎn)品類型: | Discrete Semiconductor Modules |
| Rds On-漏源導(dǎo)通電阻: | 31 mOhms |
| 上升時(shí)間: | 30 ns |
| 工廠包裝數(shù)量: | 1 |
| 子類別: | Discrete Semiconductor Modules |
| 晶體管極性: | N-Channel |
| 典型關(guān)閉延遲時(shí)間: | 50 ns |
| 典型接通延遲時(shí)間: | 30 ns |
| Vds-漏源極擊穿電壓: | 1.2 kV |
| Vgs th-柵源極閾值電壓: | 1.8 V |
