| 詳細(xì)參數(shù) | |||
|---|---|---|---|
| 品牌 | 世向 | 型號(hào) | AP2N10 |
| 種類(lèi) | 絕緣柵型 | 導(dǎo)電方式 | 耗盡型 |
| 溝道類(lèi)型 | N溝道 | 可測(cè)氣體 | 其他 |
| 加工定制 | 否 | 產(chǎn)地 | 深圳 |
Green Device Available
Super Low Gate Charge?Excellent Cdv/dt effect decline
Advanced high cell density Trenchtechnology
TheAP2N10 is the high cell density trenchedN-ch MOSFETs, which provides excellent RDSONand efficiency for most of the small powerswitching and load switch applications.Themeet the RoHS and Green Productrequirement with full function reliability approved.
