| 詳細參數(shù) | |||
|---|---|---|---|
| 品牌 | 其他 | 型號 | AP50N03 |
| 種類 | 絕緣柵型 | 導(dǎo)電方式 | 增強型 |
| 溝道類型 | N溝道 | 可測氣體 | 硫化氫 |
| 加工定制 | 是 | 產(chǎn)地 | 深圳 |
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density
TrenchtechnologyProduct SummaryBVDSSRDSONID30V7.6mΩ50ADebionThe AP50N03 is the high cell density trenchedN-ch MOSFETs, which provide excellent RDSONand gate charge for most of the synchronous buckconverter applications.The meet the RoHS and GreenProduct requirement, 100% EAS guaranteed withfull function reliability approved.
