| 瑭崇窗鍙冩暩(sh霉) | |||
|---|---|---|---|
| 鍝佺墝 | HS | 鍨嬭櫉 | HS475 |
| 杓稿嚭淇¤櫉 | 鑶烘暩(sh霉)瀛楀瀷 | 鍒朵綔宸ヨ棟 | 闆嗘垚 |
| 鏉愯唱 | 娣峰悎鐗� | 鏉愭枡鐗╃悊鎬ц唱 | 鍗婂皫楂� |
| 鏉愭枡鏅堕珨绲愭 | 鍠櫠 | 鍔犲伐瀹氬埗 | 鏄� |
| 绮剧⒑搴� | 楂� | 闈堟晱搴� | 楂� |
| 閲嶅京鎬� | 濂� | 宸ヤ綔婧害 | 150 |
| 椤嶅畾闆诲 | 5 | 瀵嗗皝鎬� | 濂� |
| 绶氭€у害 | 濂� | 閬叉化 | 浣� |
| 婕傜Щ | 浣� | 鐢�(ch菐n)鍦� | 涓湅 |
涓冩倕绉戞妧锛屽皥娉ㄩ湇鐖撅紝鎮ㄨ韩閭婄殑闇嶇埦鑺墖灏堝锛�
娣卞湷甯備竷鎮呯鎶€鏈夐檺鍏徃锛屽皥妤�(y猫)寰炰簨纾佹帶闇嶇埦闁嬮棞鐨勭爺鐧�(f膩)鍜岄姺鍞�銆�
娣卞湷涓冩倕绉戞妧鐐轰綘鍎�(y艒u)閬告捣閲忓畬鏁寸殑闆荤礄鏇搁湇鐖�锛岄柋璁€鍣ㄩ湇鐖鹃枊闂淗S475锛屾敮鎸佸湪绶氬鏅傝鍍广€�
General Debion
The HS475 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits.This serves to place the high current-cons uming portions of the circuit into a 鈥淪leep鈥� mode. Periodically the device is 鈥淎wakened鈥� by this internal logic and the magnetic flux from the Hall element is buated against the predefined thresholds. If the flux density is above or below the B OP/BRP thresholds then the output transistor is driven to change states accordingly. While in the 鈥淪leep鈥� cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems.
The output transistor of the HS475 will be latched on (BOP) in the presence of a sufficiently
strong South or North magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence of amagnetic field.It incorporates advanced chopper-stabilization
techniques to provide accurate and stable magnetic switch points.
娣卞湷甯備竷鎮呯鎶€鏈夐檺鍏徃锛岄暦鏈熸彁渚涘叏妤甸湇鐖鹃枊闂�锛屽柈妤甸湇鐖鹃枊闂�锛岄洐妤甸帠瀛橀湇鐖鹃枊闂�锛屽井鍔熻€楅湇鐖鹃枊闂滐紝纾佹€у偝鎰熷櫒锛�闇嶇埦鍏冧欢(4姊濊吙)锛岄娀鍖栭姦Insb锛岄湇鐖惧偝鎰熷櫒锛岀窔鎬ч湇鐖�锛岄浕姗熼湇鐖�锛屾脯閫熼湇鐖�锛岄湇鐖�IC锛岀鎺ч枊闂溿€�
姝¤繋渚嗛浕鍜ㄨ瑭崇窗鍔熻兘銆佸弮鏁�(sh霉)鍙婁唬鏇垮瀷铏熼伕鍨�锛岄毃鏅傛彁渚涙妧琛撴敮鎸�锛�
