MKS RPS AX7695 等離子源

規(guī)格:

類型AX7695 集成遠(yuǎn)程等離子源
點(diǎn)火氣體供應(yīng)100% O2 或 Ar，或 90% O2/10% N2（聯(lián)系 MKS 以使用其他氣體點(diǎn)火）
工藝氣體供應(yīng)高達(dá) 6.0 slm 的 100% O2 或 90% O2/10% N2（聯(lián)系 MKS 以使用其他氣體點(diǎn)火）
運(yùn)營(yíng)壓力點(diǎn)火：0.5 到 2.0 Torr @ 1.0 到 6.0 slm（在 R*evolution III 出口處測(cè)量的壓力）
過(guò)程：0.5 到 2.0 Torr @ 1.0 到 6.0 slm輸出就緒，交流線路，等離子開(kāi)啟，電源監(jiān)視器,輸入等離子開(kāi)/關(guān)，電源組占空比100%
聯(lián)鎖內(nèi)部熱敏開(kāi)關(guān)和內(nèi)部水流開(kāi)關(guān)可防止冷卻不足
接液材料6061-T6 鋁、Kalrez®、SiO2、316L SS、鎳、氟硅樹(shù)脂
控制接口離散量 I/O、9 和 25 針 D 連接器、RS-232、DeviceNet? 和以太網(wǎng)（支持 MKS TOOLweb®）
電源要求180 至 228 VAC，50/60 Hz，30A，3 相冷卻水1.75 加侖/分鐘，< 30°C

RPS AX7695集成遠(yuǎn)程等離子體源，在未來(lái)幾年內(nèi)性能有所提高早期的模型提供了性能、最清潔的活性氣體源半導(dǎo)體晶圓加工所需。新成立的偏遠(yuǎn)地區(qū)家庭中的第一個(gè)專門(mén)為“晶圓上”應(yīng)用而設(shè)計(jì)的等離子體源，創(chuàng)新的R*evolutionIII結(jié)合了MKS經(jīng)現(xiàn)場(chǎng)驗(yàn)證的專利低場(chǎng)環(huán)形等離子體技術(shù)和堅(jiān)固的等離子噴涂器設(shè)計(jì)，可產(chǎn)生超清潔的中性原子或自由基。原子自由基在許多過(guò)程中都是必不可少的，比如去除光刻膠、晶圓預(yù)清潔、薄膜氮化和氧化。部首通常是通過(guò)生成等離子體；然而，相關(guān)的帶電粒子有時(shí)是不可取的。避免這些副作用，血漿是遠(yuǎn)程產(chǎn)生的，自由基是有效的運(yùn)輸至工藝室。

RPS AX7695反應(yīng)氣體發(fā)生器集成了石英真空室、RF電源和所有必要的控制裝置集成在一個(gè)緊湊、獨(dú)立的單元中，方便直接安裝在工具的工藝室上。結(jié)果是一個(gè)非常干凈的來(lái)源使原子自由基在晶圓上產(chǎn)生所需的反應(yīng)，在一個(gè)大大降低的水平復(fù)雜性。RPS AX7695遠(yuǎn)程等離子可提供高達(dá)6千瓦的等離子電源源向工藝提供大量自由基（高達(dá)6 slm），導(dǎo)致剝離或蝕刻速度是傳統(tǒng)微波系統(tǒng)的兩倍。因?yàn)樗腞*evolution III遠(yuǎn)程等離子體源效率高、成本低，大大降低了成本總體投資和工具運(yùn)營(yíng)成本。此外，它的體積更小，設(shè)計(jì)簡(jiǎn)單方便用戶安裝、操作和維護(hù)。

RPS AX7695 integrated remote plasma source, with improved capability over the earlier model, provides the highest perbing and cleanest source of reactive gas species required in the processing of semiconductor wafers. The first in a new family of remote plasma sources specifically designed for “on-wafer” applications, the innovative R*evolution III combines MKS’s field-proven, patented Low-Field Toroidal plasma technology with a robust plasma applicator design that produces ultra clean atomic neutrals or radicals.

Atomic radicals are essential in many processes, such as photo-resist removal, wafer pre-clean, and thin film nitridation and oxidation. Radicals are typically created by generating a plasma; however, the associated charged particles are sometimes undesirable. To avoid these adverse effects, the plasma is generated remoby and the radicals are efficiently transported to the process chamber.The R*evolution III reactive gas generator integrates a quartz vacuum chamber, an RF power supply and all necessary controls into a compact, self-contained unit for easy installation directly on the tool’s process chamber. The result is an extremely clean source of atomic radicals to bring about the desired reb on the wafer, at a greatly reduced level of complexity. Delivering up to 6 kW of plasma power, the RPS AX7695 remote plasma source provides high flows of radicals to the process (up to 6 slm), resulting in strip or etch rates that are twice as fast as those of conventional microwave systems. Because of its efficiency and lower cost, the R*evolution III remote plasma source significantly reduces overall investment and tool operating costs. Additionally, its smaller size and design simplicity benefits the user with ease of installation, operation and maintenance.

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